Last edited by Malagor
Sunday, November 8, 2020 | History

11 edition of Infrared Ellipsometry on Semiconductor Layer Structures found in the catalog.

Infrared Ellipsometry on Semiconductor Layer Structures

Phonons, Plasmons, and Polaritons (Springer Tracts in Modern Physics)

by Mathias Schubert

  • 381 Want to read
  • 35 Currently reading

Published by Springer .
Written in English

    Subjects:
  • Optics (light),
  • Science,
  • Material Science,
  • Science/Mathematics,
  • Optics,
  • Physics,
  • Technology / Material Science,
  • Layer structure (Solids),
  • Electronics - General,
  • Ellipsometry

  • The Physical Object
    FormatHardcover
    Number of Pages193
    ID Numbers
    Open LibraryOL9055044M
    ISBN 103540232494
    ISBN 109783540232490


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Infrared Ellipsometry on Semiconductor Layer Structures by Mathias Schubert Download PDF EPUB FB2

The study of semiconductor-layer structures using infrared ellipsometry is a rapidly growing field within optical spectroscopy. This book offers basic insights into the concepts of phonons, plasmons and polaritons, and the infrared dielectric function of semiconductors in layered by: The study of semiconductor-layer structures using infrared ellipsometry is a rapidly growing field within optical spectroscopy.

This book offers basic insights into the concepts of phonons, plasmons and polaritons, and the infrared dielectric function of semiconductors in layered structures. It describes how strain, composition, and the state of the atomic order within complex layer structures of multinary alloys can be determined from an infrared ellipsometry : Springer-Verlag Berlin Heidelberg.

The study of semiconductor-layer structures using infrared ellipsometry is a rapidly growing field within optical spectroscopy. This book offers basic insights into the concepts of phonons, plasmons and polaritons, and the infrared dielectric function of semiconductors in layered structures.

The study of semiconductor-layer structures using infrared ellipsometry is a rapidly growing field within optical spectroscopy. This book offers basic Infrared Ellipsometry on Semiconductor Layer Structures book into the concepts of phonons, plasmons and polaritons, and the infrared dielectric function of semiconductors in layered structures.

It describes how strain, composition, and the state of the atomic order within complex layer structures of multinary alloys can be determined from an infrared ellipsometry. Get this from a library. Infrared ellipsometry on semiconductor layer structures: phonons, plasmons, and polaritons.

[Mathias Schubert] -- "This book offers basic insights into the concepts of phonons, plasmons and polaritons, and the infrared dielectric function of semiconductors in layered structures. Ellipsometry is a powerful tool used for the characterization of thin films and multi-layer semiconductor structures.

This book deals with fundamental principles and applications of spectroscopic ellipsometry Cited by: Spectroscopic Ellipsometry: Principles and Applications Hiroyuki Fujiwara.

Ellipsometry is a powerful tool used for the characterization of thin films and multi-layer semiconductor structures. This book deals with fundamental principles and applications of spectroscopic ellipsometry.

Infrared Ellipsometry on III-V semiconductor layer structures Der Fakultät für Physik und Geowissenschaften der Universität Leipzig eingereichte Habilitationsschrift zur Erlangung des File Size: 14KB.

Brilliant laboratory sources, such as optical parametric oscillators and laser sources, as well as tunable free-electron lasers (FELs) and synchrotron radiation sources, have been very important in pushing the development of modern mid-IR spectroscopy.

15–21 The Infrared Handbook, edited by W.-L. Wolfe and G. Zissis [The Infrared Author: Karsten Hinrichs, Timur Shaykhutdinov, Christoph Kratz, Andreas Furchner. We address and explain the occurrence of bulk and interface modes in zinc-blende group-III–group-V semiconductor layer structures observed by spectroscopic ellipsometry at infrared wavelengths.

About this book. Ellipsometry is a powerful tool used for the characterization of thin films and multi-layer semiconductor structures. This book deals with fundamental principles and applications of spectroscopic ellipsometry.

Fig. 2 presents Ψ and Δ spectra of the LD structure. Experimental and best-fit data agree excellently with each other. Below cm −1 the spectra are dominated by features originating from the infrared Cited by: 4.

The infrared optical response of layered structures composed of polar semiconductor materials is strongly influenced by resonant excitation of phononand plasmon-supported bulk polaritons. In. Infrared Ellipsometry on Semiconductor Layer Structures: Phonons, Plasmons, and Polaritons by Mathias Schubert Springer, ISBN Infrared Ellipsometry on Semiconductor Layer Structures Mathias Schubert optics, to semiconductors and flexible electronics.

The core belief reflected in this book is that ellipsometry applied at the nanoscale offers new ways of addressing many current needs.

Infrared. Abstract. We report for the first time on the application of generalized ellipsometry at far-infrared wavelengths (wave numbers from cm-1 to cm-1) for measurement of the anisotropic dielectric response of doped polar semiconductors in layered structures Cited by: We report on the application of generalized ellipsometry at far-infrared wavelengths (– cm −1) for measurement of the anisotropic dielectric response of doped polar semiconductors in layered structures Cited by: 6.

Generalized far-infrared magneto-optic ellipsometry for semiconductor layer structures: Determination of free-carrier effective-mass, mobility, and concentration parameters in n-type GaAs. An overview of applications of infrared spectrometric ellipsometry for characterizing samples which consist of a metal, semiconductor or organic layer on a variety of substrates is given.

The thicknesses addressed cover the entire nanometer range. Both anisotropy and inhomogeneity of the layers Cited by: We report for the first time on the application of generalized ellipsometry at far-infrared wavelengths (wave numbers from cm-1 to cm-1) for measurement of the anisotropic dielectric response of doped polar semiconductors in layered structures.

Generalized far-infrared magneto-optic ellipsometry for semiconductor layer structures: determination of free-carrier effective-mass, mobility, and concentration parameters in n-type GaAs. Generalized far-infrared magneto-optic ellipsometry for semiconductor layer structures.

Infrared spectroscopic ellipsometry (IRSE) metrology is an emerging technology in semiconductor production environment.

Infineon Technologies SC implemented the first worldwide automated Cited by: 4. Generalized Far-Infrared Magneto-Optic Ellipsometry for Semiconductor Layer Structures: Determination of Free-Carrier Effective-Mass, Mobility, and Concentration Parameters in n-Type.

Ellipsometry is a powerful tool used for the characterization of thin films and multi-layer semiconductor structures. This book deals with fundamental principles and applications of spectroscopic ellipsometry 5/5(1). Abstract Infrared spectroscopic ellipsometry (IRSE) metrology is an emerging technology in semiconductor production environment.

Infineon Technologies SC implemented the first. Ellipsometry can probe the complex refractive index or dielectric function tensor, which gives access to fundamental physical parameters like those listed above.

It is commonly used to characterize film thickness for single layers. This book provides a basic understanding of spectroscopic ellipsometry, with a focus on characterization methods of a broad range of solar cell materials/devices, from traditional solar cell materials (Si, CuInGaSe2, and CdTe) to more advanced emerging materials (Cu2ZnSnSe4, organics, and hybrid perovskites), fulfilling a critical need in the photovoltaic community.

The book. Ellipsometry is an optical technique for investigating the dielectric properties of thin films. Ellipsometry measures the change of polarization upon reflection or transmission and compares it to a model. It. In this book standard methods such as far-infrared spectroscopy, ellipsometry, Raman scattering, and high-resolution X-ray diffraction are presented, as well as new advanced techniques which provide the potential for better in-situ characterization of epitaxial structures (such as reflection anistropy spectroscopy, infrared.

Generalized far-infrared magneto-optic ellipsometry for semiconductor layer structures: Determination of free-carrier effective mass, mobility and concentration parameters in n-type GaAs M.

Infrared Spectroscopic Ellipsometry is presented as a feasible and novel technique for contactless and nondestructive measurement of free-carrier and crystal-structure properties in the characterization of complex semiconductor Cited by: 3.

J Opt Soc Am A Opt Image Sci Vis. Feb;20(2) Generalized far-infrared magneto-optic ellipsometry for semiconductor layer structures: determination of free-carrier effective-mass, Cited by: This book presents and introduces ellipsometry in nanoscience and nanotechnology making a bridge between the classical and nanoscale optical behaviour of materials.

It delineates the role of the non-destructive and non-invasive optical diagnostics of ellipsometry. Handbook of Ellipsometry. This book is divided into four sections. Chapters 1, 2, and 3 explain the theory of ellipsometry.

Chapters 4 through 7 discuss instrumentation. Chapters 8 and 9 are critical reviews of some applications in the field. The last three chapt 11, deal with emerging areas in ellipsometry.

Ellipsometry is a non-destructive technique, capable of being used for any transparent and semitransparent medium. It can measure a wide range of layer thickness from a fraction of mono-atomic layer to several micrometers.

Ellipsometry allows the determination of the thickness of single layers and multi-layer. Schubert, Infrared Ellipsometry on Semiconductor Layer Structures: Phonons, Plasmons and Polaritons (Springer, Berlin, ).

Without this additional projection T the obtained absolute ε (ω). The µSE tool is designed to measure thin film thickness and optical properties inside a semiconductor product wafers.

The applied measurement technique for obtaining these parameters in a high accuracy and repeatable way is spectroscopic ellipsometry. The constants were revealed by a best fit of the ellipsometric spectra of a thick single layer on a gold-coated glass substrate (PnBMA: d = nm ± nm and n ∞ =and PVC: d= nm ± nm and n ∞ = ; n ∞ values are taken from vis ellipsometry).

Meanwhile ellipsometry is a well-established method for thin film analysis. It provides material parameters like n and k even for arbitrary anisotropic layers, film thicknesses in the range down to a few Ångström, and ellipsometry is used to analyze the shape of nm-scale surface structures.

Infrared ellipsometry is a reflection technique for determining the optical properties of a sample. It is advantageously employed to characterize layers down to nanometer thickness. The two Cited by:.

T1 - Ellipsometry of semiconductor nanocrystals. AU - Petrik, Peter. AU - Fried, Miklos. PY - /1/1. Y1 - /1/1. N2 - In this chapter we make an attempt to give a comprehensive overview on the optical modeling of layer structures that accommodate or are entirely composed of semiconductor Cited by: 2.Delivers real-time multi-layer stack characterization and CD measurement simultaneously, for both known and completely unknown structures.

Patented multimodal measurement technology meets the challenging demands associated with the most complex semiconductor .DUV-Vis-NIR (Wavelength Range: nm – nm) Scatterometers/ Thin Film Metrology Systems: The n&k LittleFoot-CD Series are DUV-Vis-NIR scatterometers/thin film metrology systems, based on .